Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach
نویسندگان
چکیده
منابع مشابه
Physics-Based Modeling of Hot-Carrier Degradation
We present and verify a physics-based model of hot-carrier degradation (HCD). This model is based on a thorough solution of the Boltzmann transport equation. Such a solution can be achieved using either a stochastic solver based on the Monte Carlo approach or a deterministic counterpart that is based on representation of the carrier energy distribution function as a series of spherical harmonic...
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a Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Vienna, Austria A.F.Ioffe Physical–Technical Institute, 26 Polytechnicheskaya Str., 194021 St.-Petersburg, Russia Christian Doppler Laboratory for Reliability Issues in Microelectronics at IUE, TU Wien, Gußhausstraße 27-29, A-1040 Vienna, Austria Austriamicrosystems AG, Unterpremstätten, Austria e Institute für Theoretische ...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2019
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2019.2933729